On 12th May 2009, Prof. Dr. Wolfgang Stolz was invited to IME to give a talk on “Novel Dilute Nitride III/V - Semiconductor Laser System Integrated On (001) Si-Substrate”. The Head of Central Technology Laboratory at Philipps University Marburg and Adjunct Professor at Optical Sciences Center for University of Arizona gave a comprehensive introduction to the novel material system Ga(NAsP) and how the conduction band formation process can be used to realize a direct band gap semiconductor. The variety of physical investigation techniques, high crystalline quality, direct band gap character as well as laser operation of the novel Ga(NAsP) material system on (001) Si-substrate was also discussed during the session. Prof. Dr. Wolfgang Stolz also presented the advantages of the integration scheme and the challenges in the next steps.

Dr. Wolfgang Stolz on "Novel Dilute Nitride III/V - Semiconductor Laser System Integrated On (001) Si-Substrate"